价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFS3004TRL7PP | 269 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFS3004TRL7PP | 7,900 | 1 | |||||||||
| Future Electronics | IRFS3004TRL7PP | 30,400 | 800 | Tape & Reel | ||||||||
| Rochester Electronics | IRFS3004TRL7PP | 173,511 | 23h | |||||||||
| DigiKey | IRFS3004TRL7PPCT-ND | 3,519 | 1 | Cut Tape |
备用零件
Price @ 1000
$ 1.68
$ 5.06
Stock
1,003,695
147,949
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
-
4 V
Rds On Max
1.25 mΩ
1.25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
9.13 nF
9.13 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-10-28
Lifecycle StatusNRND (Last Updated: 3 months ago)
相关零件
InfineonAUIRFS3004-7P
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
InfineonIRLS3034TRL7PP
MOSFET N-CH 40V 240A D2PAK7 / Trans MOSFET N-CH Si 40V 380A 7-Pin(6+Tab) D2PAK T/R
VishaySQM200N04-1M1L-GE3
SQM200N04-1M1L-GE3 N-CHANNEL MOSFET TRANSISTOR, 200 A, 40 V, 7-PIN TO-263
STMicroelectronicsSTH320N4F6-6
In a Pack of 5, N-Channel MOSFET, 200 A, 40 V, 8-Pin H2PAK STMicroelectronics STH320N4F6-6
STMicroelectronicsSTH410N4F7-6AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
描述
由其分销商提供的 Infineon IRFS3004TRL7PP 的描述。
Single N-Channel 40V 1.25 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 400A 7-Pin(6+Tab) D2PAK T/R
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
MOSFET, N-CH, 100V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 900µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time160 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3.7 V
Number of Channels1
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity800
Power Dissipation380 W
Rds On Max1.25 mΩ
Resistance1.25 MΩ
Rise Time240 ns
Schedule B8541290080
Turn-Off Delay Time91 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm