价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR3410TRPBF | 8,000 | 2K | 20h | ||||||||
| Newark | IRLR3410TRPBF | 12,006 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLR3410TRPBF | 120,000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRLR3410TRPBF | 11,283 | 1 | |||||||||
| Rutronik | TMOSP12639 | 2,000 | 2K | 1h |
备用零件
Price @ 1000
$ 0.443
$ 1.17
$ 1.17
Stock
2,146,178
655,974
655,974
Authorized Distributors
6
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
2 V
-
-
Rds On Max
105 mΩ
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
52 W
79 W
79 W
Input Capacitance
800 pF
800 pF
800 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-30
Lifecycle StatusProduction (Last Updated: 1 month ago)
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描述
由其分销商提供的 Infineon IRLR3410TRPBF 的描述。
Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
Single N-Channel 100V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance800 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance105 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation52 W
Rds On Max105 mΩ
Resistance105 mΩ
Rise Time53 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm