Infineon IRLR3410PBF

Name: Infineon IRLR3410PBF
Brand: Infineon
SKU: IRLR3410PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.105 Ohm; Id 17A; D-pak (TO-252AA); Pd 79W

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR3410PBF	0	1200	Bulk					1.790	16h
Farnell	IRLR3410PBF	0	1		1.127*	0.911*	0.643*	0.449*	0.439*	10h
Win Source	WS-IRLR3410PBF	36,050	210					0.204	0.189	1h
Worldway Electronics	IRLR3410PBF	15,373	7	Tube		0.586	0.568	0.538	0.538	1d
Fly-Wing Technology	IRLR3410PBF	184,715			0.403	0.331	0.320	0.300	0.300	2d

数据表和文档

下载 Infineon IRLR3410PBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLR3410PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W

RS (Formerly Allied Electronics)

On a Reel of 3000, IRLR3410TRLPBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin DPAK Infineon

Jak Electronics

Single N-Channel 100 V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 100V, 15A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:79W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRLR3410; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC