Infineon IRLL014NTRPBF

Name: Infineon IRLL014NTRPBF
Brand: Infineon
SKU: IRLL014NTRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.14 Ohm; Id 2.8A; SOT-223; Pd 2.1W; Vgs +/-16V

$ 0.295

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRLL014NTRPBF	7,500	2500						0.136	1d
Newark	2	IRLL014NTRPBF	2,967	1	Cut Tape	0.888	0.578	0.398	0.295	0.295
Arrow Electronics	3	IRLL014NTRPBF	4,658	1		0.211	0.211	0.211	0.211	0.211
Future Electronics	3	IRLL014NTRPBF	70,000	2500	Tape & Reel					0.161
DigiKey	3	IRLL014NPBFCT-ND	45,967	1	Cut Tape	0.880	0.546	0.353	0.243	0.243

数据表和文档

下载 Infineon IRLL014NTRPBF 的数据表和制造商文档。

Newark

Datasheet10 页22 年前

Datasheet9 页22 年前

IHS

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+0.81%

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InfineonIRLL014NTRPBF

onsemiFQT13N06LTF

Price @ 1000

$ 0.295

$ 0.327

Stock

2,667,709

307,025

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223

SOT-223-4

Drain to Source Voltage (Vdss)

55 V

60 V

Continuous Drain Current (ID)

2 A

2.8 A

Threshold Voltage

2 V

2.5 V

Rds On Max

140 mΩ

110 mΩ

Gate to Source Voltage (Vgs)

16 V

20 V

Power Dissipation

2.1 W

Input Capacitance

230 pF

350 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-10-07

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLL014NTRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount

Avnet

IRLL014NTRPBF,MOSFET, 55V, 2A, 140 MOHM, 9.5 NC QG, LOGIC LE

Jameco

Trans MOSFET N-CH 55V 2.8A 4-Pin (3+Tab) SOT-223 T/R

Verical

HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon Technologies IRLL014NTRPBF.

Newark

MOSFET, N CH 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 140 / Gate-Source Voltage V = 16 / Fall Time ns = 2.9 / Rise Time ns = 4.9 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1

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