供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
相关零件
InfineonIRLL014NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
InfineonIRFL014NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V
InfineonIRFL014NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V
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Protected Power MOSFET, N-Channel, Clamped, Logic Level, 2.6 A, 52 V, with ESD Protection
onsemiHUFA75307T3ST
Transistor,Mosfet,N-Channel,55V V(Br)Dss,2.6A I(D),Sot-223 Rohs Compliant: Yes
描述
由其分销商提供的 Infineon IRLL014NPBF 的描述。
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Single N-Channel 55 V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 Tube
Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
MOSFET, N, 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:16A; SMD Marking:LL014N; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance230 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance140 mΩ
Package Quantity1760
PackagingBulk
Power Dissipation2.1 W
Rds On Max140 mΩ
Recovery Time61 ns
Resistance200 mΩ
Rise Time4.9 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time5.1 ns
Voltage Rating (DC)55 V
Dimensions
Height1.4478 mm
Length6.6802 mm