Infineon IRLHS6376TRPBF

Name: Infineon IRLHS6376TRPBF
Brand: Infineon
SKU: IRLHS6376TRPBF

Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

$ 0.231

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制造商页面数据表

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Distributor		SKU		Min	Pkg
Avnet		IRLHS6376TRPBF	12,000	4K						0.142	23h
Newark	2	IRLHS6376TRPBF	82	1	Cut Tape	0.865	0.515	0.350	0.241	0.241
Arrow Electronics	3	IRLHS6376TRPBF	1,552	1		0.158	0.158	0.158	0.158	0.158
Future Electronics	2	IRLHS6376TRPBF	8,000	4K	Tape & Reel					0.215
Rutronik		TMOSS6784	4,000	4K						0.164	4h

数据表和文档

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IHS

Datasheet10 页12 年前

Newark

Farnell

库存历史记录

3 个月趋势:

+66.07%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-07-19

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

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Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

Future Electronics

30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS

Infineon SCT

Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R

Avnet

Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R

Verical

DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon