Infineon IRFH5304TRPBF

Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R

MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46