供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
相关零件
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFHS8242TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
描述
由其分销商提供的 Infineon IRFH5255TRPBF 的描述。
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
MOSFET, N-Channel, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.9 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time3.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance988 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation26 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time10.7 ns
Turn-Off Delay Time6.5 ns
Turn-On Delay Time7.9 ns
Dimensions
Height950 µm
Length5.9944 mm
Width5 mm