Infineon IRL2203NPBF

Name: Infineon IRL2203NPBF
Brand: Infineon
SKU: IRL2203NPBF

Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

$ 0.944

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRL2203NPBF	704,371					0.722	0.599	0.534	6h
RS (Formerly Allied Electronics)		IRL2203NPBF	0	1	Bulk	1.430	1.290	1.290	1.290	1.290	22h
Farnell		IRL2203NPBF	0	1		1.663*	1.256*	1.256*	1.256*	1.256*	5h
Component Stockers USA		IRL2203NPBF	489,476			0.600	0.600	0.560	0.510	0.510	3d
Win Source		WS-IRL2203NPBF	14,620	55				0.943	0.730	0.730	7h

数据表和文档

下载 Infineon IRL2203NPBF 的数据表和制造商文档。

IHS

Datasheet10 页22 年前

Datasheet9 页22 年前

Datasheet9 页25 年前

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

+51.03%

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InfineonIRL2203NPBF

InfineonAUIRL2203N

Price @ 1000

$ 0.944

$ 1.05

Stock

1,812,555

60,310

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

1 V

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

130 W

180 W

Input Capacitance

3.29 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

描述

由其分销商提供的 Infineon IRL2203NPBF 的描述。

Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB

RS (Formerly Allied Electronics)

Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

Infineon

Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

element14 APAC