供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-15
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2024-01-03
LTD Date2024-07-03
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
InfineonIRL8113PBF
MOSFET N-CH 30V 105A TO220AB N-Channel 30 V 105A (Tc) 110W (Tc) Through Hole TO-220AB
描述
由其分销商提供的 onsemi FDP8896 的描述。
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
onsemi N-Ch Enhancement MOSFET PowerTrench Vds=30V 16A TO-220AB TH 3-Pin
Trans MOSFET N-CH 30V 16A Automotive 3-Pin(3+Tab) TO-220AB Tube
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
30 V, 92 A, 5.9 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current60 A
Current Rating92 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation80 W
Rds On Max5.9 mΩ
Resistance5.9 MΩ
Rise Time103 ns
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time9 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明