备用零件
Price @ 1000
$ 0.684
$ 0.728
$ 0.728
Stock
85,119
177,304
177,304
Authorized Distributors
5
2
2
Mount
Through Hole
-
-
Case/Package
TO-220AB
TO-220
TO-220
Drain to Source Voltage (Vdss)
30 V
-
-
Continuous Drain Current (ID)
80 A
50 A
50 A
Threshold Voltage
-
-
-
Rds On Max
5.9 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
12 V
12 V
Power Dissipation
80 W
83 W
83 W
Input Capacitance
2.525 nF
-
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-15
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-01-03
LTD Date2024-07-03
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
描述
由其分销商提供的 onsemi FDP8896 的描述。
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 16A Automotive 3-Pin(3+Tab) TO-220AB Tube
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
30 V, 92 A, 5.9 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current60 A
Current Rating92 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation80 W
Rds On Max5.9 mΩ
Resistance5.9 MΩ
Rise Time103 ns
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time9 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm