Infineon IRG4PH30KDPBF

Name: Infineon IRG4PH30KDPBF
Brand: Infineon
SKU: IRG4PH30KDPBF

IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4PH30KDPBF	0	4K	Bulk					4.340	22h
Farnell		IRG4PH30KDPBF	0	1		2.113*	1.922*	1.909*	1.881*	1.881*	5h
Microchip USA		IRG4PH30KD	252	600	Bag				2.210	2.210	23h
Component Stockers USA		IRG4PH30KDPBF	382			99.990	99.990	99.990	99.990	99.990	3d
Win Source	2	WS-IRG4PH30KD	63	3			18.507	15.522	15.522	15.522	6h

数据表和文档

下载 Infineon IRG4PH30KDPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet11 页25 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4PH30KDPBF 的描述。

IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC

Future Electronics

SHORT CIRCUIT RATED ULTRAFAST INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

ComSIT Distribution GmbH

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) | IGBT 1200V 20A 100W TO247AC

Win Source

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC