Infineon IRG4PH40UDPBF

Name: Infineon IRG4PH40UDPBF
Brand: Infineon
SKU: IRG4PH40UDPBF

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

$ 6.635

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Rochester Electronics		IRG4PH40UDPBF	1					2.980	2.670	2.510	12h
RS (Formerly Allied Electronics)		IRG4PH40UDPBF	0	1	Bulk	11.780	10.600	10.600	10.600	10.600	5h
Farnell		IRG4PH40UDPBF	0	1		7.212*	7.212*	7.212*	7.212*	7.212*	12h
Win Source	2	WS-IRG4PH40UD	6,296	5			10.909	7.273	7.273	7.273	13h
Worldway Electronics	2	IRG4PH40UDPBF	16,611	7	Tube		0.909	0.881	0.834	0.834	1d

数据表和文档

下载 Infineon IRG4PH40UDPBF 的数据表和制造商文档。

IHS

Datasheet10 页14 年前

Newark

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4PH40UDPBF 的描述。

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

Verical

Copacked 1200V IGBT in a TO-247AC package with a ultrafast 5-40 kHz soft recovery diode, TO247COPAK-3, RoHS

Infineon SCT

IRG4PH40UDP Series 1200 V 12 A Insulated Gate Bipolar Transistor - TO-247AC

Future Electronics

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

IHS

IGBT 1200V 21A 2,43V TO247 RoHSconf

Rutronik

IRG4PH40 DISCRETE IGBT WITH ANTI-PARALL;

Farnell

Target Applications: Solar; Welding

Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Win Source

IRG4PH40U - 1200V ULTRAFAST 5-40

Vigor Components

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC