Infineon IRG4PH40UD2-EP

Name: Infineon IRG4PH40UD2-EP
Brand: Infineon
SKU: IRG4PH40UD2-EP

Transistor, Igbt, N-chan+diode, 1.2KV V(br)ces, 41A I(C), TO-247AD ; Rohs Compliant: Yes

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Farnell		IRG4PH40UD2-EP	0	1		12.475*	12.475*	6.163*	5.904*	5.904*	4h
Microchip USA		IRG4PH40UD2-EP	181	150	Bulk				22.490	22.490	1d
Component Stockers USA		IRG4PH40UD2-EP	20,061			2.410	2.360	2.290	2.220	2.220	3d
Win Source	2	WS-IRG4PH40UD2-E	5,880	5			10.909	7.273	7.273	7.273	18h
Worldway Electronics	2	IRG4PH40UD2-E	17,774	7			2.829	2.742	2.598	2.598	1d

数据表和文档

下载 Infineon IRG4PH40UD2-EP 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Newark

Future Electronics

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-09-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4PH40UD2-EP 的描述。

TRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,41A I(C),TO-247AD ;RoHS Compliant: Yes

Newark

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AD

Avnet

Copacked 1200V IGBT in a TO-247AD package with ultrafast 5-40 kHz soft recovery diode, TO247COPAK-3, RoHS

Infineon SCT

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

IHS

IGBT W/DIODE 1200V 41A TO247AD

DigiKey

Target Applications: Solar; Welding

Infineon

IRG4PH40 - DISCRETE IGBT WITH AN

Vigor Components

IGBT, TO-247AD; Transistor type:IGBT; Voltage, Vces:1200V; Current, Ic continuous a max:21A; Voltage, Vce sat max:3.1V; Power dissipation:160W; Case style:TO-247AD; Current, Icm pulsed:82A; Pins, No. of:3; Power, Pd:160W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Time, fall max:200ns; Time, rise:26ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:1200V

Farnell