Infineon IRG4BC40WPBF

Name: Infineon IRG4BC40WPBF
Brand: Infineon
SKU: IRG4BC40WPBF

600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

$ 3.82

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC40WPBF	0	1	Bulk	4.100	4.100	3.820	3.820	3.820	20h
Farnell	2	IRG4BC40WPBF	0	1		4.172*	4.172*	4.172*	4.172*	4.172*	3h
Microchip USA		IRG4BC40W	202	600	Tray				1.798	1.798	22h
Win Source	2	WS-IRG4BC40WPBF	38,300	25				1.865	1.565	1.565	4h
Worldway Electronics	2	IRG4BC40WPBF	16,774	7	Tube		1.266	1.227	1.163	1.163	1d

数据表和文档

下载 Infineon IRG4BC40WPBF 的数据表和制造商文档。

Newark

Datasheet8 页16 年前

Datasheet9 页21 年前

Datasheet9 页25 年前

Datasheet8 页25 年前

IHS

RS (Formerly Allied Electronics)

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

描述

由其分销商提供的 Infineon IRG4BC40WPBF 的描述。

600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

Avnet

IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB

Future Electronics

Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

Infineon

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

Farnell

IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC