Infineon IRG4BC40FPBF

Name: Infineon IRG4BC40FPBF
Brand: Infineon
SKU: IRG4BC40FPBF

Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB

$ 7.81

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC40FPBF	0	1	Bulk	7.810	7.810	7.810	7.810	7.810	12h
Farnell		IRG4BC40FPBF	0	1		5.290*	4.490*	3.812*	3.812*	3.812*	6h
Component Stockers USA		IRG4BC40FPBF	554			99.990	99.990	99.990	99.990	99.990	1d
Win Source	2	WS-IRG4BC40F	3,759	6			11.261	7.508	7.508	7.508	21h
Worldway Electronics	2	IRG4BC40FPBF	17,075	7	Tube		1.514	1.468	1.390	1.390	20h

数据表和文档

下载 Infineon IRG4BC40FPBF 的数据表和制造商文档。

IHS

Datasheet8 页16 年前

Newark

_legacy Avnet

DigiKey

RS (Formerly Allied Electronics)

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4BC40FPBF 的描述。

Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB

Jameco

IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB

Future Electronics

600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

FAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W

Distrelec

IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC