Infineon IRG4BC40UPBF

Name: Infineon IRG4BC40UPBF
Brand: Infineon
SKU: IRG4BC40UPBF

600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

$ 6.48

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC40UPBF	0	1	Bulk	7.360	6.480	6.480	6.480	6.480	8h
Microchip USA		IRG4BC40U	313	600	Tray				1.732	1.732	1d
Component Stockers USA		IRG4BC40UPBF	743			1.990	1.990	1.860	1.860	1.860	10h
Win Source	2	WS-IRG4BC40UPBF	29	12				3.829	3.433	3.433	20h
Worldway Electronics	2	IRG4BC40U	11,175	7	Tube		6.869	6.739	6.480	6.350	19h

数据表和文档

下载 Infineon IRG4BC40UPBF 的数据表和制造商文档。

Newark

Datasheet8 页16 年前

Datasheet9 页25 年前

Datasheet8 页25 年前

Upverter

Factory Futures

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-09-30

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2009-02-11

LTD Date2009-08-11

描述

由其分销商提供的 Infineon IRG4BC40UPBF 的描述。

600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

Verical

IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

Future Electronics

Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

Infineon

Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

Maritex

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Semicontronic

IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC