Infineon IRFZ34NPBF

Name: Infineon IRFZ34NPBF
Brand: Infineon
SKU: IRFZ34NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 29A; TO-220AB; Pd 68W; Vgs +/-20V

$ 0.366

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Distributor		SKU		Min	Pkg
Avnet	2	63J7120	4,928	1		1.170	0.694	0.628	0.475	0.435	2d
Newark		IRFZ34NPBF	54,378	1		1.170	0.693	0.627	0.474	0.434
Arrow Electronics	3	IRFZ34NPBF	27,417	1		1.670	1.670	0.691	0.490	0.376
Future Electronics	2	IRFZ34NPBF	115,150	100	Tube			0.325	0.320	0.305
Rochester Electronics		IRFZ34NPBF	250					0.391	0.324	0.289	23h

数据表和文档

下载 Infineon IRFZ34NPBF 的数据表和制造商文档。

IHS

Datasheet10 页22 年前

Datasheet9 页28 年前

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

+35.04%

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InfineonIRFZ34NPBF

InfineonAUIRFZ34N

Price @ 1000

$ 0.366

$ 1.043

Stock

1,244,038

106,349

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

26 A

29 A

Threshold Voltage

4 V

2 V

Rds On Max

40 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

56 W

68 W

Input Capacitance

700 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

描述

由其分销商提供的 Infineon IRFZ34NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

Avnet

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 68

Distrelec

MOSFET, N, 55V, 26A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:26A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:100A; Device Marking:IRFZ34NPBF; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:56W; Power, Pd:56W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

Farnell