Infineon IRLZ34NPBF

Name: Infineon IRLZ34NPBF
Brand: Infineon
SKU: IRLZ34NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.035 Ohm; Id 30A; TO-220AB; Pd 68W; Vgs +/-16V

$ 0.523

EOL

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRLZ34NPBF	2,045	1		0.581	0.566	0.422	0.422	0.422	3d
Newark		IRLZ34NPBF	3,786	1		1.690	0.871	0.791	0.603	0.575
Future Electronics	2	IRLZ34NPBF	2,300	30	Tube			0.730	0.695	0.650
Arrow Electronics	3	IRLZ34NPBF	33,549	1		0.686	0.686	0.542	0.423	0.344
Rochester Electronics		IRLZ34NPBF	55					0.529	0.439	0.392	17h

数据表和文档

下载 Infineon IRLZ34NPBF 的数据表和制造商文档。

IHS

Datasheet9 页22 年前

Datasheet10 页22 年前

Newark

Mouser

RS (Formerly Allied Electronics)

Jameco

库存历史记录

3 个月趋势:

+35.42%

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供应链

Country of OriginMainland China, USA

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IRLZ34NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 30 Amp 3 Pin 3+ Tab TO-220 AB

Jameco

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 30 A, TO-220, IRLZ34NPBF

Burklin Elektronik

MOSFET, 55V, 27A, 35 MOHM, 16.7 NC QG, LOGIC LEVEL, TO-220AB

Master Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 68 W

Distrelec

MOSFET, N, 55V, 27A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:110A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon