Infineon IRFS7537TRLPBF

Name: Infineon IRFS7537TRLPBF
Brand: Infineon
SKU: IRFS7537TRLPBF

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 0.735

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Distributor		SKU		Min	Pkg
Newark		IRFS7537TRLPBF	798	1	Cut Tape	2.610	1.680	1.150	0.855	0.855
Arrow Electronics		IRFS7537TRLPBF	672	1		0.732	0.732	0.732	0.732	0.732
Future Electronics	2	IRFS7537TRLPBF	11,200	800	Tape & Reel				0.705	0.685
Rochester Electronics		IRFS7537TRLPBF	225					0.885	0.735	0.655	1h
DigiKey	3	IRFS7537TRLPBFCT-ND	533	1	Cut Tape	2.500	1.607	1.095	1.095	1.095

数据表和文档

下载 Infineon IRFS7537TRLPBF 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Newark

库存历史记录

3 个月趋势:

-44.46%

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InfineonIRFS7537TRLPBF

InfineonIRFS7537PBF

Price @ 1000

$ 0.735

$ 1.01

Stock

361,974

258,824

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

173 A

Threshold Voltage

3.7 V

Rds On Max

3.3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

230 W

Input Capacitance

7.02 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-17

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFS7537TRLPBF 的描述。

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 60V 3.3 mOhm 142 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK T/R

Verical

MOSFET, 60V,173A, 3.3mOhm, 142nC, D2PAK

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

Infineon

MOSFET, N-CH, 60V, 173A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 173A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 230W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell