价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS3307ZTRRPBF | 75,313 | 22h | |||||||||
| DigiKey | 448-IRFS3307ZTRRPBFCT-ND | 568 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFS3307ZTRRPBF | 0 | 800 | Tape & Reel | ||||||||
| Avnet | IRFS3307ZTRRPBF | 0 | 800 | 1d | ||||||||
| Arrow Electronics | IRFS3307ZTRRPBF | 0 | 800 |
备用零件
Price @ 1000
$ 1.211
$ 1.598
$ 1.598
Stock
423,773
434,201
434,201
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
120 A
120 A
120 A
Threshold Voltage
-
-
-
Rds On Max
5.8 mΩ
5.8 mΩ
5.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.75 nF
4.75 nF
4.75 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-03
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-03-31
相关零件
InfineonAUIRFS3306TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
VishaySUM90N06-5M5P-E3
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiBBS3002-TL-1E
MOSFET P-CH 60V 100A D2PAK / P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount D2PAK (TO-263)
描述
由其分销商提供的 Infineon IRFS3307ZTRRPBF 的描述。
MOSFET N-CH 75V 120A D2PAK / Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R
Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.8 mΩ
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation230 W
Rds On Max5.8 mΩ
Rise Time64 ns
Turn-Off Delay Time38 ns
Turn-On Delay Time15 ns
Dimensions
Height5.084 mm