供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
相关零件
InfineonIPB26CN10NGATMA1
MOSFET N-CH 100V 35A TO263-3 / Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R
描述
由其分销商提供的 onsemi FQB32N12V2TM 的描述。
MOSFET N-CH 120V 32A D2PAK
Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 120V N-Channel Adv Q-FET C-Series
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)32 A
Current Rating32 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time158 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.75 W
Rds On Max50 mΩ
Rise Time190 ns
Turn-Off Delay Time114 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)120 V
Dimensions
Height4.95 mm