价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 25R3336 | 1 | 1 | 14h | ||||||||
| Newark | IRFR3607TRPBF | 1 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR3607TRPBF | 7,000 | 1 | |||||||||
| Future Electronics | IRFR3607TRPBF | 50,000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12296 | 152,000 | 2K | 20h |
备用零件
Price @ 1000
$ 0.719
$ 2.52
$ 2.52
Stock
2,758,368
126,134
126,134
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
56 A
56 A
56 A
Threshold Voltage
2 V
2 V
2 V
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
3.07 nF
3.07 nF
3.07 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
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描述
由其分销商提供的 Infineon IRFR3607TRPBF 的描述。
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:56A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR3607TRPBF.
MOSFET, N CH, 75V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.07 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation140 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm