Infineon IRFR120NTRPBF

Name: Infineon IRFR120NTRPBF
Brand: Infineon
SKU: IRFR120NTRPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.21 Ohm; Id 9.4A; D-pak (TO-252AA); Pd 48W

$ 0.456

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRFR120NTRPBF	9,000	2K						0.251	2d
Newark	2	IRFR120NTRPBF	3,285	1	Cut Tape	1.250	0.988	0.655	0.428	0.428
Arrow Electronics	2	IRFR120NTRPBF	6,714	1		0.226	0.226	0.226	0.226	0.226
Future Electronics	2	IRFR120NTRPBF	50,000	2K	Tape & Reel					0.355
Rochester Electronics		IRFR120NTRPBF	21,614					0.459	0.381	0.340	22h

数据表和文档

下载 Infineon IRFR120NTRPBF 的数据表和制造商文档。

Newark

Datasheet11 页21 年前

Datasheet12 页21 年前

Datasheet10 页21 年前

RS (Formerly Allied Electronics)

Jameco

Verical

iiiC

库存历史记录

3 个月趋势:

-9.34%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-03

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR120NTRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-252AA, Surface Mount

Avnet

Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 9.4A DPAK

Win Source

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N Channel Mosfet, 100V, 9.4A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IRFR120NTRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48

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