Infineon IRFR024NTRPBF

Name: Infineon IRFR024NTRPBF
Brand: Infineon
SKU: IRFR024NTRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.075 Ohm; Id 17A; D-pak (TO-252AA); Pd 45W

$ 0.394

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Distributor		SKU		Min	Pkg
Avnet	2	IRFR024NTRPBF	6,000	2K						0.238	2d
Newark	3	IRFR024NTRPBF	93,563	1	Cut Tape	1.230	0.811	0.608	0.550	0.550
Arrow Electronics	4	IRFR024NTRPBF	28,432	1		0.236	0.236	0.236	0.236	0.236
Future Electronics	3	IRFR024NTRPBF	182,000	2K	Tape & Reel					0.290
Rochester Electronics		IRFR024NTRPBF	522					0.375	0.312	0.278	23h

数据表和文档

下载 Infineon IRFR024NTRPBF 的数据表和制造商文档。

Newark

Datasheet11 页21 年前

Datasheet12 页21 年前

DigiKey

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

-12.28%

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InfineonIRFR024NTRPBF

InfineonAUIRFR024N

Price @ 1000

$ 0.394

$ 4.8

Stock

3,034,127

163,293

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

17 A

Threshold Voltage

4 V

2 V

Rds On Max

75 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

38 W

45 W

Input Capacitance

370 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-08-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR024NTRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 55 V, 17 A, 0.075 ohm, TO-252AA, Surface Mount

Avnet

MOSFET N-CH 55V 17A DPAK / Trans MOSFET N-CH Si 55V 17A 3-Pin(2+Tab) DPAK T/R

Win Source

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N Channel Mosfet, 55V, 17A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IRFR024NTRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 45

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