Infineon IRLR024NTRLPBF

Name: Infineon IRLR024NTRLPBF
Brand: Infineon
SKU: IRLR024NTRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.065 Ohm; Id 17A; D-pak (TO-252AA); Pd 45W

$ 0.906

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IRLR024NTRLPBF	176	1	Cut Tape	0.906	0.906	0.906	0.906	0.906
Rochester Electronics	2	IRLR024NTRLPBF	12,421					0.446	0.370	0.330	15m
RS (Formerly Allied Electronics)		IRLR024NTRLPBF	0	25	Bulk			1.070	0.960	0.960	17h
Farnell	3	IRLR024NTRLPBF	2	1	Cut Tape	1.112*	1.112*	1.112*	1.112*	1.112*	1d
Verical		IRLR024NTRLPBF	12,000	747					0.463	0.413

数据表和文档

下载 Infineon IRLR024NTRLPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

Newark

SOS electronic

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+689%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRLR024NTRLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

N CHANNEL MOSFET, 55V, 17A, D-PAK; Trans; N CHANNEL MOSFET, 55V, 17A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 45

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