Infineon IRFP4668PBF

Name: Infineon IRFP4668PBF
Brand: Infineon
SKU: IRFP4668PBF

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC

$ 2.505

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Future Electronics	2	IRFP4668PBF	3	10	Tube		3.480	3.440	3.350	3.250
Arrow Electronics	2	IRFP4668PBF	1,099	1		3.924	3.924	3.924	3.924	3.924
Rutronik		TMOSP12230	3,650	25				2.500	2.110	2.110	11h
Rochester Electronics		IRFP4668PBF	94					2.050	1.840	1.730	4h
RS (Formerly Allied Electronics)		IRFP4668PBF	0	1	Bulk	3.070	2.700	2.700	2.700	2.700	17h

数据表和文档

下载 Infineon IRFP4668PBF 的数据表和制造商文档。

Newark

Datasheet8 页17 年前

IHS

iiiC

库存历史记录

3 个月趋势:

-15.52%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRFP4668PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-09-08

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFP4668PBF 的描述。

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC

RS (Formerly Allied Electronics)

Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

Avnet

N CHANNEL MOSFET, 200V, 130A, TO-247AC;; N CHANNEL MOSFET, 200V, 130A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Re; Available until stocks are exhausted

element14 APAC

N Channel Mosfet, 200V, 130A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:30V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFP4668PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, 200V 130A TO-247AC; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:200V; Cont Current Id:130A; On State Resistance:8mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-247AC; Termination Type:Through Hole; Operating Temperature Range:-55°C to + 175°C; Max Voltage Vds:200V; Power Dissipation:520W; Pulse Current Idm:520A; Transistor Case Style:TO-247AC

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 30 / Fall Time ns = 74 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 41 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 520

Distrelec