Infineon IRFP90N20DPBF

Name: Infineon IRFP90N20DPBF
Brand: Infineon
SKU: IRFP90N20DPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.023 Ohm; Id 94A; TO-247AC; Pd 580W; Vgs +/-30V

$ 2.976

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IRFP90N20DPBF	1,961	25				2.781	2.482	2.482	1d
Newark		IRFP90N20DPBF	1,062	1		7.850	5.050	4.380	4.330	4.330
Arrow Electronics		IRFP90N20DPBF	459	1		2.226	2.226	2.226	2.226	2.226
Future Electronics	2	IRFP90N20DPBF	402	25	Tube			3.100	3.030	2.970
Rochester Electronics		IRFP90N20DPBF	398					2.890	2.580	2.430	4h

数据表和文档

下载 Infineon IRFP90N20DPBF 的数据表和制造商文档。

IHS

Datasheet10 页21 年前

Datasheet9 页24 年前

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

-33.71%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-08-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

描述

由其分销商提供的 Infineon IRFP90N20DPBF 的描述。

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V

RS (Formerly Allied Electronics)

Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC

Maritex

Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC

Jameco

MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W

Distrelec

Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 90A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

N Channel Mosfet, 200V, 94A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:94A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFP90N20DPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC