Infineon IRFP4568PBF

Name: Infineon IRFP4568PBF
Brand: Infineon
SKU: IRFP4568PBF

IRFP4568PBF N-channel MOSFET Transistor, 171 A, 150 V, 3-Pin TO-247AC

$ 2.576

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Distributor		SKU		Min	Pkg
Avnet	2	45P6114	1	1		4.330	4.330	4.330	4.330	4.330	12h
Newark		IRFP4568PBF	1	1		4.330	4.330	4.330	4.330	4.330
Rochester Electronics		IRFP4568PBF	16					2.450	2.190	2.060	10h
Arrow Electronics		IRFP4568PBF	4,401	1		2.576	2.576	2.576	2.576	2.576
Future Electronics	2	IRFP4568PBF	0	10	Tube		2.500	2.460	2.400	2.330

数据表和文档

下载 Infineon IRFP4568PBF 的数据表和制造商文档。

Newark

Datasheet8 页17 年前

IHS

iiiC

库存历史记录

3 个月趋势:

+52.20%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-09-08

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2026-05-31

LTD Date2026-11-30

描述

由其分销商提供的 Infineon IRFP4568PBF 的描述。

IRFP4568PBF N-channel MOSFET Transistor, 171 A, 150 V, 3-Pin TO-247AC

RS (Formerly Allied Electronics)

MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 517 W

Distrelec

Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 171A 3-Pin(3+Tab) TO-247AC Tube

Verical

Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

MOSFET, 150V 171A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:171A; Drain Source Voltage Vds:150V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:517W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:171A; Package / Case:TO-247AC; Power Dissipation Pd:517W; Pulse Current Idm:684A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon