Infineon IRFHM792TRPBF

Name: Infineon IRFHM792TRPBF
Brand: Infineon
SKU: IRFHM792TRPBF

Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

$ 0.427

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFHM792TRPBF	659					0.514	0.427	0.381	15h
Farnell	2	IRFHM792TRPBF	0	1	Cut Tape	1.029*	0.796*	0.738*	0.547*	0.547*	1h
Win Source		WS-IRFHM792TRPBF	36,600	205					0.228	0.191	15h
Worldway Electronics		IRFHM792TRPBF	9,529	7	Tape & Reel		0.134	0.130	0.123	0.123	3d
ICPartonline		IRFHM792TRPBF	23,069			0.968	0.920	0.872	0.823	0.775	>1wk

数据表和文档

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Farnell

Datasheet10 页12 年前

IHS

Newark

库存历史记录

3 个月趋势:

+0.00%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFHM792TRPBF 的描述。

Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

MOSFET, DUAL N-CH, 100V, 4.8A, PQFN; Available until stocks are exhausted Alternative available

Farnell

Transistor MOSFET Array Dual N-CH 100V 3.4A 8-Pin PQFN T/R

Avnet

Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R / MOSFET 2N-CH 100V 2.3A 8PQFN

Win Source

N CH MOSFET, DUAL, 100V, 3.4A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon