价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSP372NH6327XTSA1 | 2,000 | 1K | 2d | ||||||||
| Newark | BSP372NH6327XTSA1 | 28 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BSP372NH6327XTSA1 | 1,980 | 1 | |||||||||
| Future Electronics | BSP372NH6327XTSA1 | 1,000 | 1K | Tape & Reel | ||||||||
| Rutronik | TMOSS6559 | 6,000 | 1K | 2h |
供应链
Country of OriginAustria
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-03
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
相关零件
InfineonIRFL4310TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
InfineonIRFL4310PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
描述
由其分销商提供的 Infineon BSP372NH6327XTSA1 的描述。
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
1.8KW 20V 1.8V 9.5nC@ 10V 1N 100V 230m¦¸@ 10V 247pF@ 25V SOT-223 6.5mm*350cm*1.6mm
OPTIMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Infineon Technologies BSP372NH6327XTSA1
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance247 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance230 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max230 mΩ
Rise Time6.7 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time47.3 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.7 mm
合规
环境分类
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
合规声明