Infineon IRFH7936TRPBF

Name: Infineon IRFH7936TRPBF
Brand: Infineon
SKU: IRFH7936TRPBF

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

$ 0.351

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFH7936TRPBF	4,530				0.423	0.351	0.313	5h
RS (Formerly Allied Electronics)	IRFH7936TRPBF	0	4K	Bulk				1.235	21h
Microchip USA	IRFH7936TRPBF	2,544	3500	Tray				0.424	23h
Win Source	WS-IRFH7936TRPBF	6,103	115				0.375	0.336	6h
Worldway Electronics	IRFH7936TRPBF	18,121	7	Bulk	0.103	0.099	0.094	0.094	1d

数据表和文档

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Farnell

Datasheet9 页12 年前

IHS

element14 APAC

iiiC

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-05

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IRFH7936TRPBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

Infineon SCT

Power Field-Effect Transistor, 76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET N CH 30V 20A PQFN; Transistor Type:MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:30V; Cont Current Id:20A; On State Resistance:4.1mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:PQFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:20A; Max Voltage Vds:30V; Max Voltage Vgs:20V; Power Dissipation:3.1W; Rds Measurement Voltage:10V; Transistor Case Style:PQFN

Farnell

Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

Infineon