Infineon IRFHM830TRPBF

Name: Infineon IRFHM830TRPBF
Brand: Infineon
SKU: IRFHM830TRPBF

Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

$ 0.322

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFHM830TRPBF	3,860	1		0.265	0.265	0.265	0.265	0.265
Rochester Electronics		IRFHM830TRPBF	29,853					0.456	0.379	0.337	2h
RS (Formerly Allied Electronics)		IRFHM830TRPBF	0	4K	Bulk					1.380	18h
Farnell		IRFHM830TRPBF	2,980	1		1.566*	1.008*	0.722*	0.509*	0.509*	1h
Microchip USA		IRFHM830TRPBF	111	600	Tray				2.412	2.412	18h

数据表和文档

下载 Infineon IRFHM830TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页0 年前

Datasheet9 页11 年前

element14 APAC

Farnell

库存历史记录

3 个月趋势:

-2.06%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRFHM830TRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-09-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRFHM830TRPBF 的描述。

Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

Infineon SCT

Transistor: N-MOSFET; unipolar; HEXFET; 30V; 21A; 2.7W; PQFN3.3X3

Epart123

Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

Avnet

IRMOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon