Infineon IRFH5304TR2PBF

Name: Infineon IRFH5304TR2PBF
Brand: Infineon
SKU: IRFH5304TR2PBF

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

$ 1.06

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFH5304TR2PBF	0	800	Bulk				1.060	0.965	7h
Microchip USA	IRFH5304TR2PBF	239	150	Tray				10.530	10.530	5d
Win Source	WS-IRFH5304TR2PBF	2,000	105					0.375	0.375	19h
Worldway Electronics	IRFH5304TR2PBF	13,330	7			0.231	0.226	0.218	0.213	16h
Anlinkda	IRFH5304TR2PBF	47,308			0.438	0.392	0.354	0.336	0.325	1h

数据表和文档

下载 Infineon IRFH5304TR2PBF 的数据表和制造商文档。

IHS

Datasheet9 页11 年前

element14 APAC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-08

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2014-05-12

LTD Date2014-11-12

描述

由其分销商提供的 Infineon IRFH5304TR2PBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

International Rectifier

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.0pF 50Volts C0G +/-0.05pF

Utmel Electronic

Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 22A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N CH, 30V, 79A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Power Dissipation Pd:46W; Voltage Vgs Max:20V

element14 APAC