供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2024-09-17
相关零件
InfineonJANTX2N6788
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
描述
由其分销商提供的 Infineon IRFF9220 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
IRFF Series TO-205AF (TO-39) 200V 2.5A Hi-Rel Thru Hole Mosfet
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance1.725 Ω
Drain to Source Voltage (Vdss)-200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance10.5 Ω
Power Dissipation20 W
Turn-Off Delay Time40 ns
Turn-On Delay Time50 ns
Dimensions
Height4.57 mm