备用零件
Price @ 1000
$ 16.68
$ 18.685
Stock
3,474
610
Authorized Distributors
1
2
Mount
Through Hole
Through Hole
Case/Package
TO-39
TO-39
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
2.25 A
2.25 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
15 W
15 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Infineon IRFF210 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39
N Channel Mosfet, 200V, 2.25A, To-205Af
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.25 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance10.5 Ω
Power Dissipation15 W
Schedule B8541290080