Infineon IRFB4229PBF

Name: Infineon IRFB4229PBF
Brand: Infineon
SKU: IRFB4229PBF

IRFB4229PBF N-channel MOSFET Transistor, 46 A, 250 V, 3-Pin TO-220AB

$ 1.394

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IRFB4229PBF	14,302	50				1.248	0.919	0.919	2d
Newark		IRFB4229PBF	344	1		1.530	1.530	1.530	1.530	1.530
Future Electronics	2	IRFB4229PBF	900	50	Tube			1.940	1.880	1.840
Arrow Electronics		IRFB4229PBF	988	1		3.206	1.784	1.784	1.784	1.784
Rutronik		TMOSP12123	17,000	50				1.270	1.073	1.073	5h

数据表和文档

下载 Infineon IRFB4229PBF 的数据表和制造商文档。

IHS

Datasheet9 页18 年前

Datasheet8 页18 年前

iiiC

库存历史记录

3 个月趋势:

+5.94%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-09-10

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFB4229PBF 的描述。

IRFB4229PBF N-channel MOSFET Transistor, 46 A, 250 V, 3-Pin TO-220AB

RS (Formerly Allied Electronics)

250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 250V 46A TO-220AB

Win Source

Single N-Channel 250 V 46 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 250 V, 46 A, 0.038 ohm, TO-220AB, Through Hole

Avnet

Power Field-Effect Transistor, 46A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:250V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:46A; N-channel Gate Charge:72nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon