价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF9Z34NLPBF | 335 | 13h | |||||||||
| RS (Formerly Allied Electronics) | IRF9Z34NLPBF | 0 | 650 | Bulk | 6h | |||||||
| Farnell | IRF9Z34NLPBF | 0 | 5 | 13h | ||||||||
| Verical | IRF9Z34NLPBF | 335 | 248 | |||||||||
| Win Source | WS-IRF9Z34NL | 34,000 | 115 | 14h |
备用零件
Price @ 1000
$ 2.08
$ 2.08
Stock
341,471
341,471
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
19 A
19 A
Threshold Voltage
-4 V
-4 V
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
68 W
68 W
Input Capacitance
620 pF
620 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-07-27
LTD Date2013-01-27
描述
由其分销商提供的 Infineon IRF9Z34NLPBF 的描述。
IRF9Z34NLPBF P-channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-262
MOSFET P-CH 55V 19A TO-262 / Trans MOSFET P-CH Si 55V 19A 3-Pin(3+Tab) TO-262 Tube
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -55V, 19A, TO-262; TRA; P CHANNEL MOSFET, -55V, 19A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; MSL:-
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Current Rating-19 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-55 V
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation68 W
Rds On Max100 mΩ
Rise Time55 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height9.65 mm
Length10.67 mm
Width4.826 mm
合规
环境分类
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
合规声明