供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-11-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2022-10-15
LTD Date2023-04-15
相关零件
InfineonIRFSL7440PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
InfineonIRFZ46NLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
描述
由其分销商提供的 Infineon IRF3205LPBF 的描述。
MOSFET N-CH 55V 110A TO262 N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Mosfet, N-Ch, 55V, 110A, To-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon Technologies IRF3205LPBF
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.247 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max8 mΩ
Rise Time101 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
合规声明