Infineon IRF3205LPBF

Name: Infineon IRF3205LPBF
Brand: Infineon
SKU: IRF3205LPBF

55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

$ 1.78

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF3205LPBF	0	10	Bulk		1.980	1.780	1.780	1.780	7h
Farnell		IRF3205LPBF	0	1		2.359*	1.881*	1.445*	1.445*	1.445*	14h
Component Stockers USA		IRF3205LPBF	1,474			1.120	1.000	0.600	0.600	0.600	3d
Win Source	2	WS-IRF3205LPBF	1,133	30				1.395	1.133	1.133	15h
Worldway Electronics	2	IRF3205L	13,787	7	Tube		0.480	0.466	0.441	0.441	1d

数据表和文档

下载 Infineon IRF3205LPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Farnell

DigiKey

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

描述

由其分销商提供的 Infineon IRF3205LPBF 的描述。

55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

SHENGYU ELECTRONICS

HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Newark