备用零件
Price @ 1000
$ 0.542
$ 0.542
Stock
174,435
1,022,141
1,022,141
Authorized Distributors
2
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
-30 V
Continuous Drain Current (ID)
12 A
12 A
12 A
Threshold Voltage
-1.8 V
-1.8 V
-1.8 V
Rds On Max
11.9 mΩ
11.9 mΩ
11.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.68 nF
1.68 nF
1.68 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
相关零件
描述
由其分销商提供的 Infineon IRF9328PBF 的描述。
Trans MOSFET P-CH 30V 12A 8-Pin SOIC N Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,P CH,30V,12A,SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-12A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance11.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Elements1
On-State Resistance11.9 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max11.9 mΩ
Recovery Time76 ns
Rise Time57 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time80 ns
Turn-On Delay Time19 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm