Infineon IRF7413PBF

Name: Infineon IRF7413PBF
Brand: Infineon
SKU: IRF7413PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.011 Ohm; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V; Vf 1

$ 0.74

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7413PBF	0	1	Bulk	0.830	0.740	0.740	0.740	0.740	4h
Farnell	IRF7413PBF	0	1		1.231*	0.996*	0.704*	0.491*	0.480*	15h
Win Source	WS-IRF7413PBF	13,570	180					0.235	0.217	15h
Worldway Electronics	IRF7413PBF	11,634	7	Tube		0.201	0.197	0.189	0.186	15h
ICPartonline	IRF7413PBF	9,365			0.514	0.488	0.463	0.437	0.411	>1wk

数据表和文档

下载 Infineon IRF7413PBF 的数据表和制造商文档。

Upverter

Datasheet9 页18 年前

IHS

TME

RS (Formerly Allied Electronics)

Jameco

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRF7413PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7413PBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1

RS (Formerly Allied Electronics)

Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

Infineon

Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R

Avnet

Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:58A; Row Pitch:6.3mm; SMD Marking:F7413; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC