Infineon IRF8010SPBF

Name: Infineon IRF8010SPBF
Brand: Infineon
SKU: IRF8010SPBF

Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

$ 2.68

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8010SPBF	0	450	Bulk				2.680	1.790	12h
Farnell	IRF8010SPBF	0	1		5.422*	4.107*	3.402*	2.846*	2.846*	5h
Win Source	WS-IRF8010SPBF	13,830	23				1.771	1.486	1.486	20h
Worldway Electronics	IRF8010SPBF	12,777	7	Tube		0.546	0.530	0.502	0.502	19h
Anlinkda	IRF8010SPBF	48,727			0.231	0.207	0.177	0.174	0.167	1h

数据表和文档

下载 Infineon IRF8010SPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF8010SPBF 的描述。

Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

Future Electronics

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;D2Pak;PD 260W;VGS +/-20

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK

Avnet

SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 100V, 80A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15mohm; Package / Case:D2-PAK; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC