onsemi FDB3652

Name: onsemi FDB3652
Brand: onsemi
SKU: FDB3652

N-Channel 100 V 16 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3

$ 0.989

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		FDB3652	9,600	800					0.960	0.915	1d
Newark	3	FDB3652	323	1	Cut Tape	3.280	2.250	2.060	2.060	2.060
DigiKey	3	FDB3652CT-ND	904	1	Cut Tape	3.140	2.033	1.403	1.403	1.403
Onlinecomponents.com		FDB3652	0	200	Bulk				0.975	0.975
Master Electronics		FDB3652	0	200					0.975	0.975

数据表和文档

下载 onsemi FDB3652 的数据表和制造商文档。

IHS

Datasheet13 页12 年前

Datasheet0 页0 年前

element14 APAC

onsemi

Future Electronics

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-41.35%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-04-30

Lifecycle StatusNRND (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDB3652 的描述。

N-Channel 100 V 16 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3

Future Electronics

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

onsemi

150W(Tc) 20V 4V@ 250¦ÌA 53nC@ 10V 1N 100V 16m¦¸@ 61A,10V 9A,61A 2.88nF@25V D2PAK 5.08mm

UnikeyIC

Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R

Component Sense

100 V, 61 A, 16 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N CH 61A 100V, TO236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-263; Power Dissipation Pd:150W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

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