Infineon IRF7606TRPBF

Name: Infineon IRF7606TRPBF
Brand: Infineon
SKU: IRF7606TRPBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.075 Ohm; Id -3.6A; MICRO8; Pd 1.8W; Vgs +/-20V

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7606TRPBF	0	4K	Bulk					0.630	3h
Arrow Electronics		IRF7606TRPBF	0	1
Farnell	3	IRF7606TRPBF	0	1	Cut Tape	1.115*	0.686*	0.502*	0.502*	0.502*	7h
Weyland Electronics Group Pte. Ltd.		IRF7606TRPBF	4,481	1	Tape & Reel	1.944	1.944	1.944	1.944	1.944	12h
Win Source	2	WS-IRF7606	4,000	11				3.157	3.157	3.157	12h

数据表和文档

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官方数据表4 年前

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRF7606TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.075Ohm;ID -3.6A;Micro8;PD 1.8W;VGS +/-20V

RS (Formerly Allied Electronics)

-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

Infineon SCT

MOSFET, P MICRO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd:

Farnell

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-3.6A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 10V:90mohm; Drain Source On Resistance @ 4.5V:150mohm ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon