备用零件
Price @ 1000
$ 0.331
$ 0.331
Stock
391,277
391,277
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
MSOP
MSOP
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
-1 V
-1 V
Rds On Max
270 mΩ
270 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
180 pF
180 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIRF7509TRPBF
Infineon Technologies N/P-channel dual HEXFET power MOSFET, 30 V, 2.7 A, TSSOP-8, IRF7509TRPBF
描述
由其分销商提供的 Infineon IRF7506TRPBF 的描述。
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
Dual P-Channel 30 V 0.27 Ohm 7.5 nC HEXFET® Power Mosfet - MICRO-8
-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.7A; Current Id Max:-1.7A; Drain Source Voltage Vds:-30V; Module Configuration:Dual; On Resistance Rds(on):270mohm; Package / Case:MicroSOIC; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageMSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationDual
Fall Time9.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance180 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation390 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels2
Number of Elements2
On-State Resistance270 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max270 mΩ
Resistance270 mΩ
Rise Time12 ns
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time19 ns
Turn-On Delay Time9.7 ns
Dimensions
Height1.11 mm
Length3.048 mm
Width3.048 mm