Infineon IRF7555TRPBF

-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF7555TRPBF04KBulk
14h
Win SourceWS-IRF7555TRPBF23,400175
23h
Worldway ElectronicsIRF7555TRPBF11,2087Tape & Reel
3d
ICPartonlineIRF7555TRPBF13,100
>1wk
Chipsmall LimitedIRF7555TRPBF40,0001
5h

数据表和文档

下载 Infineon IRF7555TRPBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

TME

iiiC

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-08
LTD Date2012-07-08

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描述

由其分销商提供的 Infineon IRF7555TRPBF 的描述。

-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
International Rectifier
Compliant Surface Mount 3 mm 860 µm 3 mm 64 ns Lead Free 46 ns
Augswan
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET P-CH DUAL 20V 4.3A MICRO8
Rotakorn
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Continuous Drain Current, Id:-4.3A; Package/Case:Micro8; Power Dissipation, Pd:1.25W; Continuous Drain Current - 100 Deg C:-3.4A ;RoHS Compliant: Yes
Newark

图片

Newark
TME
TME
International Rectifier
iiiC

制造商别名

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