Infineon IRF8707PBF

Name: Infineon IRF8707PBF
Brand: Infineon
SKU: IRF8707PBF

IRF8707PBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8707PBF	0	3800	Bulk					0.290	16h
Farnell	IRF8707PBF	0	1		0.381*	0.381*	0.269*	0.223*	0.223*	10h
Win Source	WS-IRF8707PBF	14,420	55				0.943	0.734	0.734	1h
Worldway Electronics	IRF8707PBF	13,657	7	Tube		0.189	0.183	0.173	0.173	1d
ICPartonline	IRF8707PBF	35,473			0.248	0.236	0.223	0.211	0.199	3d

数据表和文档

下载 Infineon IRF8707PBF 的数据表和制造商文档。

IHS

Datasheet9 页18 年前

Datasheet10 页18 年前

Farnell

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InfineonIRF8707PBF

InfineonIRF8707TRPBF

Price @ 1000

$ 0.386

Stock

663,173

1,869,200

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

1.8 V

Rds On Max

11.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

760 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-08-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF8707PBF 的描述。

IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube

Verical

Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Charge Qrr @ Tj = 25°C Typ:6.2nC; Current Id Max:11A; Package / Case:SOIC-8; Pulse Current Idm:88A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC