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描述
由其分销商提供的 STMicroelectronics STS4DNF60L 的描述。
N-Channel 60V - 0.045 Ohm - 4A - SO-8 STripFET(TM) II POWER MOSFET
DUAL MOSFET, N-CH, 60V, 4A, SOIC; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:- RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 45 / Gate-Source Voltage V = 15 / Fall Time ns = 40 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC-8 / Pins = 8 / Mounting Type = SMD / Packaging = Tape & Reel
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight4.535924 g
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time10 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation2 W
Rds On Max55 mΩ
Resistance55 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V
Dimensions
Height1.25 mm
Length5 mm