MOSFET, NN CH, 20V, 5A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.7V
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size(TM)" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.