Infineon IRF7240TRPBF

Name: Infineon IRF7240TRPBF
Brand: Infineon
SKU: IRF7240TRPBF

Mosfet, Power; P-ch; Vdss -40V; Rds(on) 0.015 Ohm; Id -10.5A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.602

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7240TRPBF	6,653	1		1.663	0.890	0.762	0.642	0.642
Rochester Electronics		IRF7240TRPBF	290					0.625	0.519	0.463	17h
DigiKey	3	IRF7240TRPBFCT-ND	6,087	1	Cut Tape	1.950	1.237	0.831	0.601	0.554
RS (Formerly Allied Electronics)		IRF7240TRPBF	0	10	Bulk		2.020	1.780	1.780	1.780	10h
Avnet		IRF7240TRPBF	0	4K							2d

数据表和文档

下载 Infineon IRF7240TRPBF 的数据表和制造商文档。

Newark

Datasheet9 页20 年前

Datasheet9 页0 年前

IHS

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-39.33%

CAD 模型

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供应链

Country of OriginIsrael, Mainland China, Philippines, Thailand

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-06-06

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-12-31

描述

由其分销商提供的 Infineon IRF7240TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount

Avnet

MOSFET P-CH 40V 10.5A 8-SOIC / Trans MOSFET P-CH Si 40V 10.5A 8-Pin SOIC T/R

Win Source

Power Field-Effect Transistor, 10.5A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

MOSFET, P CH, -40V, -10.5A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.5A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0; Available until stocks are exhausted Alternatives available

element14 APAC

MOSFET, P, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-40V; Current, Id Cont:-10.5A; Resistance, Rds On:0.015ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-3V; Case Style:SOIC; Termination Type:SMD

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2.5W; No. of Pins:8Pins RoHS Compliant: Yes

Newark