Infineon IRF7424TRPBF

Name: Infineon IRF7424TRPBF
Brand: Infineon
SKU: IRF7424TRPBF

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S

$ 0.491

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF7424TRPBF	5,500	1		1.134	0.755	0.597	0.438	0.419
DigiKey	3	IRF7424PBFCT-ND	6,178	1	Cut Tape	1.630	1.031	0.687	0.491	0.451
RS (Formerly Allied Electronics)		IRF7424TRPBF	0	4K	Bulk					0.501	11h
Avnet	2	39M3571	0	1		1.520	0.969	0.656	0.519	0.519	4d
Farnell	3	IRF7424TRPBF	11,370	5	Cut Tape		1.688*	1.069*	0.505*	0.476*	14h

数据表和文档

下载 Infineon IRF7424TRPBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

RS (Formerly Allied Electronics)

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

-18.17%

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InfineonIRF7424TRPBF

Diodes Inc.DMP3020LSS-13

Price @ 1000

$ 0.491

$ 0.351

Stock

598,712

1,065,736

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

SOP

Drain to Source Voltage (Vdss)

-30 V

30 V

Continuous Drain Current (ID)

11 A

12 A

Threshold Voltage

-2.5 V

Rds On Max

13.5 mΩ

14 mΩ

Gate to Source Voltage (Vgs)

20 V

25 V

Power Dissipation

2.5 W

Input Capacitance

4.03 nF

1.802 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-10-04

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-12-31

描述

由其分销商提供的 Infineon IRF7424TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S

RS (Formerly Allied Electronics)

Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Power Field-Effect Transistor, 11A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Power MOSFET, P Channel, 30 V, 11 A, 0.0135 ohm, SOIC, Surface Mount

Avnet

Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R

Verical

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V

Farnell

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon